End face sensor and method of producing the same

ABSTRACT

An end face sensor device and a method of producing the sensor device, where the sensor device has flexibility or bendability independent of its shape and is suitable for constructing various devices with desired shapes. The end face sensor device is characterized in that a receptor portion is formed on an end face of a filiform body, the receptor body receiving information from a subject and outputting it as different information.

TECHNICAL FILED

The present invention relates to a linear element and a method ofproducing the linear element.

BACKGROUND ART

At present, various sensors become widespread and efforts are made toachieve higher integration and higher density. As one of the efforts, anart of performing integration in a three-dimensional manner is alsoattempted.

However, in any of the sensors, a rigid substrate such as a wafer isused as a basic component. As long as the rigid substrate is used as thebasic component, its producing method is subjected to certainconstraints and also there is a limit to the degree of integration.Further, a device shape is limited to a constant shape.

Also, conductive fiber in which a surface of cotton or silk is plated orwrapped with conductive material of gold or copper has been known.

However, an art of forming a circuit element inside one yarn has notbeen known. Also, in conductive fiber, the yarn itself such as cotton orsilk is used as a basic component and the conductive fiber has the yarnitself in the center.

An object of the present invention is to provide an end face sensordevice which has flexibility or bendability without being limited to itsshape and can generate various apparatus with any shapes, and a methodof producing the end face sensor device.

DISCLOSURE OF THE INVENTION

An end face sensor device of the present invention is characterized inthat a receiving part for receiving information from a subject andoutputting the information as another information is formed on an endface of a linear body.

Here, linear elements described below can be applied as the linear body.Also, dimensions and producing methods can apply correspondingly tothose described for the linear elements.

It is characterized in that the receiving part is a light sensor.

It is characterized in that the light sensor is any of a photodiode, aphototransistor, a photo IC, a photo thyristor, a photoconductiveelement, a pyroelectric element, a color sensor, a solid-state imagesensor, an element for position detection, and a solar battery.

It is characterized in that the receiving part is a temperature sensor.

It is characterized in that the receiving part is a humidity sensor.

It is characterized in that the receiving part is an ultrasonic sensor.

It is characterized in that the receiving part is a pressure sensor.

It is characterized in that a part or all of the receiving part isformed using a conductive polymer.

It is characterized in that only one molecule of the conductive polymeris present between electrodes.

It is characterized in that the linear body is a linear element in whicha circuit element is formed continuously or intermittently in alongitudinal direction.

It is characterized in that the linear body is a linear element in whicha cross section having plural regions for forming a circuit isformed-continuously or intermittently in a longitudinal direction.

A method of producing an end face sensor device of the present inventionis characterized in that plural linear bodies are bundled to form abundle and receiving parts are formed every said bundle.

A method of producing a multi-functional end face sensor device of thepresent invention is characterized in that plural bundles in whichplural linear bodies are bundled are prepared and receiving parts withdifferent functions every each of the bundles are formed and then thelinear bodies are taken out of each of the bundles and said linearbodies taken out are bundled.

A method of producing an end face sensor device of the present inventionis characterized in that one pair of electrodes are disposed in a linearbody and a film is formed on an end face of the linear body while a biasvoltage is applied between said electrodes.

It is characterized in that the bias voltage is an AC voltage.

It is characterized in that the film is made of a conductive polymer.

It is characterized in that a length of one molecule of the conductivepolymer is shorter than or equal to a distance between the electrodes.

[Linear Element]

(Linear element 1) A linear element characterized in that a circuitelement is formed continuously or intermittently in a longitudinaldirection.

(Linear element 2) A linear element characterized in that a crosssection having plural regions in which a circuit is formed is formedcontinuously or intermittently in a longitudinal direction.

(Linear element 3) A linear element as described in the linear element 1or 2, characterized in that the element is an energy conversion element.

(Linear element 4) A linear element as described in the linear element 1or 2, characterized in that the element is an electronic circuit elementor an optical circuit element.

(Linear element 5) A linear element as described in the linear element 1or 2, characterized in that the element is a semiconductor element.

(Linear element 6) A linear element as described in the linear element 1or 2, characterized in that the element is a diode, a transistor or athyristor.

(Linear element 7) A linear element as described in the linear element 1or 2, characterized in that the element is a light emitting diode, asemiconductor laser or a light receiving device.

(Linear element 8) A linear element as described in the linear element 1or 2, characterized in that the element is a DRAM, an SRAM, a flashmemory or other memories.

(Linear element 9) A linear element as described in the linear element 1or 2, characterized in that the element is a photovoltaic element.

(Linear element 10) A linear element as described in the linear element1 or 2, characterized in that the element is an image sensor element ora secondary battery element.

(Linear element 11) A linear element as described in any one of thelinear elements 1-10, characterized in that a longitudinalcross-sectional shape has a circle, a polygon, a star shape, a crescentshape, a pedal shape, a character shape or any other shapes.

(Linear element 12) A linear element as described in any one of thelinear elements 1-11, characterized in that plural exposure parts arehad in the linear side.

(Linear element 13) A linear element as described in any one of thelinear elements 1-12, characterized in that all or a part of the linearelement is an element formed by extrusion processing.

(Linear element 14) A linear element as described in the linear element13, characterized in that a part or all of the linear element is anelement formed by further drawing processing after extrusion processing.

(Linear element 15) A linear element as described in any one of thelinear elements 12-14, characterized in that the linear element is anelement processed by further expansion after extrusion processing.

(Linear element 16) A linear element as described in the linear element15, characterized by being formed in a ring shape or a spiral shapeafter the expansion processing.

(Linear element 17) A linear element as described in the linear element16, characterized in that the ring is a multiple ring.

(Linear element 18) A linear element as described in the linear element17, characterized in that the multiple ring is made of differentmaterials.

(Linear element 19) A linear element as described in any one of thelinear elements 16-18, characterized in that a part of the ring or thespiral forms an exposure part.

(Linear element 20) A linear element as described in any one of thelinear elements 16-19, characterized in that a part or the entire voidof the ring or the spiral is filled with other materials.

(Linear element 21) A linear element as described in any one of thelinear elements 1-20, characterized in that an outside diameter is 10 mmor smaller.

(Linear element 22) A linear element as described in any one of thelinear elements 1-21, characterized in that an outside diameter is 1 mmor smaller.

(Linear element 23) A linear element as described in any one of thelinear elements 1-20, characterized in that an outside diameter is 1 μmor smaller.

(Linear element 24) A linear element as described in any one of thelinear elements 1-23, characterized in that an aspect ratio is 10 ormore.

(Linear element 25) A linear element as described in any one of thelinear elements 1-24, characterized in that an aspect ratio is 100 ormore.

(Linear element 26) A linear element as described in any one of thelinear elements 1-25, characterized in that a gate electrode region, aninsulating region, source and drain regions, and a semiconductor regionare formed inside a cross section.

(Linear element 27) A linear element as described in the linear element26, characterized in that a gate electrode region is had in the centerand on the outside of the gate electrode region, an insulating region,source and drain regions, and a semiconductor region are sequentiallyformed.

(Linear element 28) A linear element as described in the linear element26, characterized in that a hollow region or an insulating region is hadin the center and on the outward portion of the region, a semiconductorregion is had and inside said semiconductor region, source and drainregions are had so as to outwardly expose some regions and on theoutward portion of the regions, an insulating region and a gateelectrode region are had.

(Linear element 29) A linear element as described in any one of thelinear elements 1-26, characterized in that a region having at least apn junction or a pin junction is formed inside a cross section.

(Linear element 30) A linear element as described in any one of thelinear elements 1-29, characterized in that a semiconductor region inwhich the circuit is formed is made of an organic semiconductormaterial.

(Linear element 31) A linear element as described in the linear element30, characterized in that the organic semiconductor material ispolythiophene or polyphenylene.

(Linear element 32) A linear element as described in any one of thelinear elements 1-31, characterized in that a conductive region in whichthe circuit is formed is made of a conductive polymer.

(Linear element 33) A linear element as described in the linear element32, characterized in that the conductive polymer is polyacetylene,polyphenylene vinylene, or polypyrrole.

(Linear element 34) A linear element as described in any one of thelinear elements 1-33, characterized in that a different circuit elementis formed in any position of a longitudinal direction.

(Linear element 35) A linear element as described in any one of thelinear elements 1-34, characterized in that a circuit element isolationregion is had in any position of a longitudinal direction.

(Linear element 36) A linear element as described in any one of thelinear elements 1-35, characterized in that a portion with a differentcross-sectional outside diameter shape is had in any position of alongitudinal direction.

(Linear element 37) A linear element as described in any one of thelinear elements 1-36, characterized in that a part of the region isconstructed of a conductive polymer and the degree of longitudinalorientation of molecular chains is 50% or higher.

(Linear element 38) A linear element as described in any one of thelinear elements 1-36, characterized in that a part of the region isconstructed of a conductive polymer and the degree of longitudinalorientation of molecular chains is 70% or higher.

(Linear element 39) A linear element as described in any one of thelinear elements 16-20, characterized in that a part of the region isconstructed of a conductive polymer and the degree of circumferentialorientation of molecular chains is 50% or higher.

(Linear element 40) A linear element as described in any one of thelinear elements 16-20, characterized in that a part of the region isconstructed of a conductive polymer and the degree of circumferentialorientation of molecular chains is 70% or higher.

(Linear element 41) A method of producing a linear element,characterized in that a material for forming a region in which a circuitelement is formed is dissolved, melted or gelled and said material islinearly extruded in a desired shape.

(Linear element 42) A method of producing a linear element as describedin the linear element 41, characterized in that a part of the region isformed of a conductive polymer.

(Linear element 43) A method of producing a linear element as describedin the linear element 41 or 42, characterized by further performingdrawing processing after the extrusion.

(Linear element 44) A method of producing a linear element as describedin claim 41 or 42, characterized by further performing expansionprocessing after the extrusion processing.

(Linear element 45) A method of producing a linear element as describedin claim 43, characterized by further performing expansion processingafter the drawing processing.

(Linear element 46) A method of producing a linear element as describedin claim 44 or 45, characterized by being formed in a ring shape afterthe expansion processing.

(Linear element 47) A method of producing a linear element as describedin any one of the linear elements 41-46, characterized in that themethod is a method of producing a linear element laminated in multilayers outwardly from the center and a center layer is formed in a yarnshape to form a primary yarn-shaped body by extrusion and then whiletraveling said primary yarn-shaped body, materials of outward layers areejected on surfaces to sequentially form the outward layers.

(Linear element 48) A method of forming a linear element as described inthe linear element 47, characterized in that a difference between atravel speed and an ejection speed is set at 20 m/sec or higher at thetime of extrusion of a conductive polymer.

(Linear element 49) A linear element of a small unit formed by slicingand separating a linear element as described in any one of the linearelements 1-40 perpendicularly with respect to a longitudinal direction.

(Linear element 50) A linear element as described in the linear element1, characterized in that an electrode is had in the center and aninsulating layer is formed on the outer circumference of said centerelectrode and a semiconductor layer in which plural pairs of sourceregions and drain regions are formed is formed on the outercircumference of said insulating layer.

(Linear element 51) A linear element as described in the linear element1, characterized in that it is constructed so that an electrode is hadin the center and an insulating layer is formed on the outercircumference of said center electrode and plural semiconductor layersand insulating layers are alternately formed on the outer circumferenceof said insulating layer and one or more pairs of a source region and adrain region are formed in each of the semiconductor layers and also adrain region or a drain electrode in the inside layer is located betweenthe source region and the drain region.

(Linear element 52) A linear element as described in the linear element1, characterized in that a source electrode is had in the center of asemiconductor layer and plural gate electrodes are had intermittently ina circumferential direction on the circumference of said sourceelectrode through a semiconductor layer and a drain electrode is had onthe outer circumference of said semiconductor layer.

As the linear elements described above, the following linear elementscan be applied. A selection could be made properly according to use of asensor. By using the linear element as a linear body, an output signalfrom a receiving part can be, for example, amplified. Also, the outputsignal from a receiving part can be calculated.

A linear element is a linear element characterized in that a circuitelement is formed continuously or intermittently in a longitudinaldirection.

Also, it is a linear element characterized in that a cross sectionhaving plural regions in which a circuit is formed is formedcontinuously or intermittently in a longitudinal direction.

It is a method of producing a linear element, characterized in that amaterial for forming a region in which a circuit element is formed isdissolved or melted and said material is linearly extruded in a desiredshape.

That is, in this linear element, plural regions are had so as to form acircuit inside one cross section.

And, in the case of a linear element, the linear element also includes alinear element whose top has a needle shape and other shapes.

(Circuit Element)

Here, a circuit element includes, for example, an energy conversionelement. The energy conversion element is an element for convertinglight energy into electrical energy or changing electrical energy intolight energy. The element includes an electronic circuit element, amagnetic circuit element or an optical circuit element. The circuitelement differs from an optical fiber for simply transmitting a signaland also differs from a conductor.

The circuit element includes, for example, an electronic circuit elementor an optical circuit element. More specifically, it is, for example, asemiconductor element.

According to classification by the difference in a conventional processtechnique, a discrete (discrete semiconductor), a light semiconductor, amemory, etc. are given.

More specifically, the discrete includes a diode, a transistor (abipolar transistor, an FET, an insulated gate type transistor), athyristor, etc. The light semiconductor includes a light emitting diode,a semiconductor laser, a light emitting device (a photodiode, aphototransistor, an image sensor), etc. Also, the memory includes aDRAM, a flash memory, an SRAM, etc.

(Formation of Circuit Element)

In the present invention, a circuit element is formed continuously orintermittently in a longitudinal direction.

That is, it is placed so that plural regions are had inside a crosssection perpendicular to the longitudinal direction and said pluralregions form one circuit element, and such a cross section extends in ayarn shape continuously or intermittently in the longitudinal direction.

For example, for an NPN bipolar transistor, the bipolar transistor isconstructed of three regions of an emitter N region, a base P region anda collector P region. Therefore, these three regions are placed inside across section in a state of providing necessary junction between theregions.

As its placement method, for example, a method of concentrically formingeach of the regions and sequentially placing each of the regions fromthe center is contemplated. That is, the emitter region, the base regionand the collector region could be formed sequentially from the center.Of course, another placement is also contemplated and the placement withthe same topology could be used properly.

And, an electrode connected to each of the regions may be connected toeach of the regions from an end face of a yarn-shaped element. Also, theelectrode may be buried in each of the regions from the beginning. Thatis, in the case of concentrically placing each of the semiconductorregions, an emitter electrode could be formed in the center of theemitter region and a base electrode could be formed in the base regionand a collector electrode could be formed in the outer circumference ofthe collector region continuously in a longitudinal direction in amanner similar to each of the semiconductor regions. And, the baseelectrode could be divided and placed.

The NPN bipolar transistor described above can be integrally formed byan extrusion formation method described below.

In the above description, the NPN transistor has been taken as anexample, but similarly for other circuit elements, plural regions couldbe placed inside a cross section in a state of providing necessaryjunction to continuously form said cross section in a longitudinaldirection by, for example, extrusion.

(Continuous Formation, Intermittent Formation)

A circuit element has the same shape in any cross section in the case ofbeing formed continuously. This is in a state of being commonly called acookie-cutter pattern.

In said circuit element, the same element may be formed continuously orintermittently in a longitudinal direction of a linear shape.

(Linear Shape)

An outside diameter in a linear element in the present invention ispreferably 10 mm or smaller, and is more preferably 5 mm or smaller. Theoutside diameter is preferably 1 mm or smaller, and is more preferably10 μm or smaller. Particularly, by performing drawing processing, theoutside diameter can also be set at 1 μm or smaller and further 0.1 μmor smaller. In order to weave linear elements and form fabric, a smalleroutside diameter is preferable.

In the case of attempting to eject a very thin linear body having anoutside diameter of 1 μm or smaller from holes of a die and form thelinear body, clogging of the holes may occur or breakage of ayarn-shaped body may occur. In such a case, linear bodies of each of theregions are first formed. Next, using the linear bodies as an island,many islands are formed and its circumference (sea) is surrounded by asoluble substance and it is bundled by a funnel-shaped mouthpiece andcould be ejected as one linear body from a small opening. When an islandcomponent is increased and a sea component is decreased, a very thinlinear body element can be produced.

As another method, a thick linear body element could be once formed andthen be drawn in a longitudinal direction. Also, very thinning can beachieved by riding a melted raw material in a jet stream and performinga melt blow.

Also, an aspect ratio can be set at any value by extrusion formation. Inthe case by spinning, the aspect ratio is preferably 1000 or more as ayarn shape. For example, the aspect ratio can also be 100000 or more. Inthe case of using after cutting, the aspect ratio may be set at 10 to10000, 10 or less and further 1 or less, 0.1 or less to form a linearelement of a small unit.

(Intermittent Formation)

In the case of intermittently forming the same element, elementsadjacent in a longitudinal direction can be formed into differentelements. For example, a MOSFET (1), an element-to-element isolationlayer (1), a MOSFET (2), an element-to-element isolation layer (2) . . ., a MOSFET (n), an element-to-element isolation layer (n) could beformed sequentially in the longitudinal direction.

In this case, a length of the MOSFET (k) (k=1 to n) may be equal to alength of another MOSFET or may be different from the length of anotherMOSFET. A selection can be made properly according to characteristics ofa desired circuit element. Similar conditions apply to a length of theelement-to-element isolation layer.

Of course, another layer may be interposed between the MOSFET and theelement isolation layer.

In the above description, the MOSFET has been taken as an example, butin the case of forming another element, a layer necessary for use ofanother element could be inserted intermittently.

(Cross-Sectional Shape)

A cross-sectional shape of a linear element is not particularly limited.For example, the cross-sectional shape could be a circle, a polygon, astar shape and other shapes. For example, it may be a polygon shape inwhich plural vertical angles form acute angles.

Also, cross sections of each of the regions can be set arbitrarily. Thatis, for example, for a structure shown in FIG. 1, a gate electrode mayhave a star shape and the outside shape of a linear element may be acircle shape. When a surface of contact with an adjacent layer wants tobe increased depending on an element, it is preferable to use a polygonshape in which a vertical angle forms an acute angle.

And, a cross-sectional shape can easily be implemented in a desiredshape by setting a shape of an extrusion dice in said desired shape.

In the case of forming a cross section of the outermost layer in a starshape or a shape in which a vertical angle forms an acute angle, afterextrusion formation, any other materials can be buried in space betweenthe mutual vertical angles by, for example, dipping and characteristicsof an element can be changed depending on uses of the element.

Also, by fitting a linear element with a concave cross-sectional shapeinto a linear element with a convex cross-sectional shape, connectionbetween the linear elements can be made effectively.

And, when a semiconductor layer wants to be doped with impurities, theimpurities may be contained in a melt raw material, but after extrusionformation, the semiconductor layer may be passed through a vacuumchamber in a linear state to be doped with the impurities inside thevacuum chamber by, for example, an ion implantation method. When thesemiconductor layer is formed in the inside rather than the outermostlayer, ions could be implanted in only the semiconductor layer which isan inside layer by controlling ion application energy.

(Production Example, Post Processing Formation)

The above production example is an example of integrally forming anelement having plural layers by extrusion, but it may be formed bylinearly forming a basic part of an element by extrusion and thencoating said basic part by a proper method.

(Raw Material)

It is preferable to use a conductive polymer as materials of anelectrode, a semiconductor layer, etc. For example, polyacetylene,polyacene, (oligoacene), polythiazyl, polythiophene,poly(3-alkylthiophene), oligothiophene, polypyrrole, polyaniline,polyphenylene, etc. are illustrated. The materials of the electrode orthe semiconductor layer could be selected from these in consideration ofconductivity etc.

And, as the materials of the semiconductor layer, for example,polyparaphenylene, polythiophene, poly(3-methylthiophene), etc. arepreferably used.

Also, as source and drain materials, a material in which dopant is mixedinto the above semiconductor material could be used. In order to form ann type, for example, alkali metals (Na, K, Ca) etc. could be mixed.AsF₅/AsF₃ or ClO₄ ⁻ may be used as the dopant.

And, fullerene may be put into a conductive polymer material and may beused. In this case, it acts as an acceptor.

As insulating materials, general resin materials could be used. Also,SiO₂ and other inorganic materials may be used.

And, in the case of a linear element of a structure having asemiconductor region or a conductive region in the center, the centerregion may be constructed of amorphous materials (metal materials suchas aluminum or copper; semiconductor materials such as silicon). Thecenter region could be formed by inserting a linear amorphous materialinto the center of a die and traveling the linear amorphous material andcoating the outer circumference of the linear amorphous material withanother desired region by injection.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a perspective view showing a linear element according to alinear element example.

FIG. 2 is a concept front diagram showing an example of a productionapparatus of the linear element.

FIG. 3 is a front view showing an extruder used in production of thelinear element and a plan view of a die.

FIG. 4 is a view showing a linear element example of a linear element.

FIG. 5 is a plan view of a die used in production of the linear element.

FIG. 6 is a sectional view showing a production process example of alinear element.

FIG. 7 is a diagram showing a production process example of a linearelement.

FIG. 8 is a diagram showing a production example of a linear element.

FIG. 9 is a perspective view showing a linear element according to alinear element example.

FIG. 10 is a sectional view showing a linear element according to alinear element example.

FIG. 11 is a process diagram showing a production example of a linearelement.

FIG. 12 is a perspective view showing a production example of a linearelement.

FIG. 13 is a diagram showing an example applied to an integrated circuitapparatus.

FIG. 14 is a diagram showing an example applied to an integrated circuitapparatus.

FIG. 15 is a diagram showing an example applied to an integrated circuitapparatus.

FIG. 16 is a diagram showing an example applied to an integrated circuitapparatus.

FIG. 17 is a view showing a linear element example 14.

FIG. 18 is a view showing a linear element example 15.

FIG. 19 is a view showing a linear element example 16.

FIG. 20 is a view showing a linear element example 17.

FIG. 21 is a process diagram showing an example 1.

FIG. 22 is a diagram showing a production example in the example 1.

FIG. 23 is a perspective view showing a production example in an example2.

FIG. 24 is a perspective view showing a production example 3 in anexample 3.

FIG. 25 is a sectional view showing an example 4.

FIG. 26 is a sectional view showing an example 5.

FIG. 27 is a sectional view showing an example 6.

FIG. 28 is a sectional view showing an example 7.

FIG. 29 is a sectional view showing an example 8.

BEST MODE FOR CARRYING OUT THE INVENTION EXAMPLE 1

An end face sensor according to an example 1 of the present invention isshown in FIG. 21.

In an end face sensor device 2000 of the present example, a receivingpart 2005 for receiving information from a subject and outputting theinformation as another information is formed on an end face of a linearbody 2001.

Description will be made below in further detail.

The linear body 2001 has a center electrode 2007 in the center and theouter circumference of the center electrode is coated with an insulatingfilm 2008.

The above-mentioned linear body 2001 is prepared and an n-typesemiconductor layer 2004 is formed on an end face of the linear body.Next, a p-type semiconductor layer 2003 is formed on the n-typesemiconductor layer 2004. As a result of this, a receiving part (lightsensor) of pn junction is formed on the end face of the linear body2001.

Then, by coating the p-type semiconductor layer 2003 and forming atransparent electrode 2006, the end face sensor device 2000 iscompleted.

In a formation method of the n-type semiconductor layer 2004 and thep-type semiconductor layer 2003, a vapor phase formation method or aliquid phase formation method and other methods could be used and theformation method is not particularly limited to the formation methods.For example, it is preferable to use a method shown in FIG. 22. That is,the end face of the linear body 2001 of a conductive polymer could beimmersed.

Also, in formation of the transparent electrode 2006, a vapor phasemethod, a liquid phase method and other methods could be used. Thetransparent electrode could be formed by immersion in melting liquid orsolution of a conductive polymer in a manner similar to the formation ofthe semiconductor layer.

EXAMPLE 2

The present example will describe a method of producing amultifunctional sensor device at high density without performingmicromachining.

As shown in FIG. 23, in the present example, plural linear bodies 2001are prepared and the plural linear bodies are bundled. A receiving partis collectively formed on end faces of the linear bodies in a bundledstate. For example, in the bundled state, the end faces are immersed inmelting liquid or solution of a conductive polymer. As a result of this,end face sensor devices having uniform shapes and homogeneouscharacteristics on the end faces can be mass-produced.

Also, plural bundles are prepared and receiving parts having differentfunctions every each bundle are formed. In FIG. 23, the receiving partshaving each of the different functions are formed in bundles of A, B, Cand D.

After the receiving parts are formed every bundle, one or plural endface sensor devices are taken out of each of the bundles and the endface sensor devices taken out are bundled to form a bundle X. And, thebundle X may be held inside a micro-syringe.

As a result of this, a multifunctional end face sensor device is formed.

By only gathering the end face sensor devices having necessary functionsfrom each of the bundles and bundling the end face sensor devices inthis manner, a high-density sensor array can be completed.

For example, in the case of bundling linear bodies with a diameter of 10μm, about 330 to 400 linear end face sensor devices are inserted into amicro-syringe with an inside diameter of 0.2 μm. Various pieces ofinformation can be received at high density (about 1200 thousands ofpieces of information/cm2 in the present example). For example, in thecase of a visual cell with a diameter of 3 μm, 1600 thousands of visualcells are buried in a region of 4 mm φ.

In addition, a multifunctional sensor device with high density can beproduced without performing micromachining.

EXAMPLE 3

An example of formation on an end face while applying a bias is shown.Description will be made based on FIG. 24.

In the present example, a linear body in which an outer circumferentialelectrode 2011 is formed in the outer circumference of an insulatingfilm 2008 is prepared as a linear body.

In the case of forming a receiving part on an end face, a bias voltageis applied between a center electrode 2007 and the outer circumferentialelectrode 2011. And, in the case of bundling linear bodies and forming areceiving part, outer circumferential electrodes of each of the linearbodies are brought into conduction.

The receiving part is formed of a conductive polymer and the distal endof one molecule of its conductive polymer is modified by an ion group.When a bias voltage is applied, lines of electric force extend in aradial direction and the conductive polymer is arranged in the radialdirection and is formed. And, a molecular length of the conductivepolymer could be made shorter than or equal to a distance between thecenter electrode 2007 and the outer circumferential electrode 2008. Themolecular length of the polymer could be controlled by controlling thedegree of polymerization.

In the present example, only one molecule is present between theelectrodes. In the conductive polymer, a current flows between moleculesby hopping of electrons. On the other hand, in the present example, acurrent flows without causing the hopping, so that a current speedbecomes very high. Therefore, a high-speed operation is achieved in asemiconductor device including a semiconductor layer formed whileapplying the bias as described above.

And, the bias may be a DC, but it is preferable that the bias should bean AC. In the case of using the AC, entanglement of the mutual polymersis released and arrangement improves more. Particularly, it ispreferable to change a frequency with time. And, it is preferable that afrequency of 1 Hz or higher should be used as the AC.

When an AC bias and a DC bias are superimposed and applied, the polymersin which the entanglement is released by the application of the AC biasare aligned between the electrodes by the application of the DC bias.

And, a technique for forming a film made of a conductive polymer whileapplying a bias voltage between electrodes or a technique for forming aconductive polymer film of a length of one molecule between electrodescan also be applied to the case of forming a film on a normal substrateface without being limited to the case of forming a film on an end face.

Also, the outer circumferential electrode may be an electrodecircumferentially divided. Another electrode may be disposed between thecenter electrode and the outer circumferential electrode. Also, anelectrode may be disposed in any position.

And, instead of applying a bias voltage between electrodes, sound wavesmay be applied to solution or dissolution liquid of a conductivepolymer. That is, in a state of immersing an end face in solution ordissolution liquid of a conductive polymer, frequency by sound wavesetc. is applied to said solution or dissolution liquid. The entanglementof the polymer is released by the application of the frequency. It ispreferable that a frequency should be 1 Hz to 10 Mz. Of course, whileapplying the sound waves, a bias may be applied between electrodes.

EXAMPLE 4

FIG. 25 is a diagram showing an example of using CdS as a receiving partinstead of a photodiode made of an n-type semiconductor layer and ap-type semiconductor layer.

That is, the example is means for utilizing a change in internalresistance with respect to incident light, and is an energy control typesensor.

The present end face sensor device can be applied to, for example, anillumination meter, an exposure meter of a camera.

EXAMPLE 5

The present example is an example of a color sensor device. The presentexample is shown in FIG. 26.

In the present example, a color filter 2013 of R, G, B, etc. is furtherformed on a transparent electrode 2006 a formed on the p-typesemiconductor layer 2003 in the example 1. The color filter 2013 caneasily be formed by immersing an end face of a linear body in dyesolution.

And, in the linear body in the present example, an i layer is formed onthe outer circumference of a center electrode 2007. A conductive polymercan also be used in the i layer. The i layer may naturally be formed bysemiconductors other than the conductive polymer.

EXAMPLE 6

The present example is a multilayer type sensor. The present example isshown in FIG. 27.

A linear body in the present example has a center electrode 2007, anintermediate electrode 2015 and an outer circumferential electrode 2006,and insulating films are interposed between the respective electrodes.

Also, a p-type semiconductor layer 2016, an n-type semiconductor layer2017 and a p-type semiconductor layer 2018 are sequentially formed on anend face. A multilayer type color sensor is a sensor using the fact thatthe spectral sensitivity characteristics vary depending on the depth ofa junction surface of a photodiode.

A color sensor device without using a filter can be implemented by aconfiguration of the present example. The uses include, for example, ause for identification of color, a use for white balance of a videocamera, etc. Also, a signal processing circuit was conventionallycomplicated but by using a linear body, signal processing can also beperformed easily by properly connecting electrode parts of the linearbody.

EXAMPLE 7

The present example is an ultrasonic sensor device. The present exampleis shown in FIG. 28.

A linear body is constructed of a center electrode 2007 and an i layeror an insulating film 2020 formed on the outer circumference of thecenter electrode 2007.

A piezoelectric film 2021 is formed on an end face of the linear body.

In the present example, it is preferable to construct the centerelectrode 2007 of a conductive polymer. Also, it is preferable toconstruct the i layer of a conductive polymer.

When the center electrode 2007 is constructed of metal, as shown in FIG.28(c), after the occurrence of sending waves, the small peaks occur andthe small peaks become a cause of a reduction in a signal-to-noise ratioand result in an obstruction to achievement of high resolution. On theother hand, when the center electrode 2007 is constructed of theconductive polymer, as shown in FIG. 28(b), the above small peaks do notoccur and high resolution is achieved.

And, the present example can also be used as a medical ultrasonic sensoror an ultrasonic microscope.

EXAMPLE 8

The present example is an example of an ion sensor or a biosensor. Thepresent example is shown in FIG. 29.

A linear body is constructed of a center electrode 2007 and aninsulating film 2008 formed on the outer circumference of the centerelectrode.

A p-Si 2030 is formed on an electrode part of an end face of the linearbody and thereafter, the whole is coated with an SiO₂ film 2031.

An ion sensitive film 2032 is formed on an end face part of the SiO₂film 2031.

The example is an example of forming an ion sensitive film on the endface as the ion sensitive film 2032.

EXAMPLE 9

In addition to the above, various receiving parts according to subjectscan be formed on end faces. For example, the receiving parts include ataste sensor, a smell sensor, an enzyme sensor, a molecular recognitionsensor in which cyclodextrin is formed on an end face. Various sensordevices can be formed when a receiving part is formed by properlyselecting a receiving film capable of exhibiting variations in an outputsignal at the time of receiving a subject.

Any of an energy conversion type sensor and an energy control typesensor may be used as a sensor.

LINEAR ELEMENT EXAMPLE TEST EXAMPLE 1

A linear element example is shown in FIG. 1.

Numeral 6 is a linear element and in this example, a MOSFET is shown.

In the cross section, this element has a gate electrode region 1 in thecenter and in the outside of the gate electrode region, an insulatingregion 2, a source region 4, a drain region 3 and a semiconductor region5 are sequentially formed.

On the other hand, a general configuration of an extruder for formingsuch a linear element is shown in FIG. 2.

An extruder 20 has raw material containers 21, 22, 23 for holding rawmaterials for constructing plural regions in a melt state or adissolution state or a gel state. In an example shown in FIG. 2, threeraw material containers are shown, but the raw material containers couldbe disposed properly according to a configuration of the linear elementproduced.

A raw material inside the raw material container 23 is fed to a die 24.Ejection holes according to a cross section of the linear element to beproduced are formed in the die 24. A linear body ejected from theejection holes is wound on a roller 25 or is fed to the next process ina linear state as necessary.

A configuration as shown in FIG. 3 is adopted in the case of producingthe linear element of the structure shown in FIG. 1.

As the raw material containers, a gate material 30, an insulatingmaterial 31, a source and drain material 32, and a semiconductormaterial 34 are respectively held inside the containers in a melt ordissolution state or a gel state. On the other hand, in the die 24,holes are formed in communication with the respective materialcontainers.

That is, plural holes 30 a for ejecting the gate material 30 are firstformed in the center. Plural holes 31 a for ejecting the insulatingmaterial 31 are formed in the outer circumference of the center. Then,in the outer circumference, plural holes are further formed and onlysome holes 32 a, 33 a of the plural holes are in communication with thesource and drain material container 32. The other holes 34 a are incommunication with the semiconductor material container 34.

When the raw material in a melt state, a dissolution state or a gelstate is fed from each of the raw material containers to the die 24 andis ejected from the die 24, the raw material is ejected from each of theholes and hardens. By pulling the end of the raw material, a linearelement is formed in a yarn-shaped continuous state.

The yarn-shaped linear element is wound on the roller 25 or is fed tothe next process in a yarn-shaped state as necessary.

As the gate electrode material, a conductive polymer could be used. Forexample, polyacetylene, polyphenylene vinylene, polypyrrole, etc. areused. Particularly, by using polyacetylene, a linear element with asmaller outside diameter can be formed, so that it is preferable.

As the semiconductor material, for example, polyparaphenylene,polythiophene, poly(3-methylthiophene), etc. are preferably used.

Also, as the source and drain material, a material in which dopant ismixed into the semiconductor material could be used. In order to form ann type, for example, alkali metals (Na, K, Ca) etc. could be mixed.AsF₅/AsF₃ or ClO₄ ⁻ may be used as the dopant.

As the insulating material, general resin materials could be used. Also,SiO₂ and other inorganic materials may be used.

The materials illustrated above are similarly used in linear elementsshown in the following linear element examples.

And, in the present example, a takeout electrode is connected to an endface of the linear body. A takeout opening may naturally be disposed inthe side of a proper position of a longitudinal direction.

LINEAR ELEMENT EXAMPLE 2

A linear element example 2 is shown in FIG. 4.

In the present example, the takeout electrode in the linear elementexample 1 is disposed in the side of a linear element. Takeout parts 41a, 41 b shown in FIG. 4(b) can be set in a desired position of alongitudinal direction. A spacing between the takeout part 41 a and thetakeout part 41 b can also be set at a desired value.

A cross section A-A of the takeout part 41 is shown in FIG. 4(a). And, across section B-B of FIG. 4(b) is a structure of the end face shown inFIG. 1.

In the present example, a source electrode 45 and a drain electrode 46acting as takeout electrodes in the sides of a source 4 and a drain 3are respectively connected to the source 4 and the drain 4. Also, asemiconductor layer 5 is insulated from the source electrode 45 and thedrain electrode 46 by an insulating layer 47.

In order to form such a configuration, a die shown in FIG. 5 is used.That is, holes 40 a for insulating layer and holes 41 a for takeoutelectrode are disposed in the sides of source and drain materialejection openings 33 a, 34 a. The holes 40 a for insulating layer are incommunication with an insulating layer material container (not shown)and the holes 41 a for takeout electrode are in communication with atakeout electrode material container (not shown).

In this case, raw materials are first ejected from only the numerals 30a, 31 a, 32 a, 33 a, 34 a. That is, ejection from the holes 40 a, 41 ais turned off. A semiconductor layer raw material moves around portionscorresponding to the holes 40 a, 41 a and is extruded in the crosssection shown in the linear element example 1. And, in this case, thewidths of the insulating layer 47, the drain electrode 46 and the sourceelectrode 45 are set small. When ejection from the holes 40 a, 41 a isturned off, the material forming the semiconductor layer moves aroundthe portions.

Next, ejection from the holes 40 a, 41 a is turned on. As a result ofthis, a shape of the cross section changes and the material is extrudedin the cross section shown in FIG. 5. By properly changing the time atwhich the holes 40 a, 41 a are turned on and the time at which the holes40 a, 41 a are turned off, a length of the cross section A-A and alength of the cross section B-B can be adjusted to an arbitrary length.

And, it is also an example of intermittently forming shapes of the crosssection of the present example, and as A-A, other shapes of the crosssection and materials can also be used. For example, all the A-A canalso be formed in an insulating layer. Also, in the case of other endface shapes, the shapes can be formed by a similar technique.

And, when areas of the drain electrode 46 and the source electrode 45are set large and ejection from the holes 41 a for takeout electrode isturned off, the raw material of the semiconductor layer or the rawmaterial of the insulating layer does not completely move around andportions corresponding to the source electrode and the drain electrodebecome space. An electrode material could be buried in its space afterextrusion.

LINEAR ELEMENT EXAMPLE 3

A linear element example is shown in FIG. 6.

The case of integrally forming the linear element by extrusion has beenshown in the linear element examples 1 and 2, but in the presentexample, an example of forming a portion of a linear element byextrusion and forming the other portion by external processing is shown.

As a linear element, the linear element shown in the linear elementexample 2 is taken as an example.

First, a gate electrode 1 and an insulating film 2 are formed into ayarn-shaped intermediate body by extrusion (FIG. 6(a)).

Next, the outside of the insulating film 2 is coated with asemiconductor material made in a melt or dissolution state or a gelstate and a semiconductor layer 61 is formed into a secondaryintermediate body (FIG. 6(b)). In such coating, the yarn-shapedintermediate body could be passed into a bath of the semiconductormaterial in the melt or dissolution state or the gel state. Or, a methodsuch as vapor deposition may be adopted.

Then, the outside of the semiconductor layer 61 is coated with a maskingmaterial 62. The coating of the masking material 61 could also be formedby, for example, passing the secondary intermediate body into themasking material made in a melt or dissolution or gel state.

Then, predetermined positions (positions corresponding to drain andsource) of the masking material 62 are removed by etching etc. andopenings 63 are formed (FIG. 6(c)).

Then, while the yarn-shaped secondary intermediate body is passed into apressure reducing chamber, a range is controlled and ion implantation isperformed (FIG. 6(d)).

Then, a source region and a drain region are formed by passing through aheat treatment chamber and performing annealing.

Thus, the extrusion and the external processing could be combinedproperly according to materials or arrangement of the regions formed.

LINEAR ELEMENT EXAMPLE 4

An example of sequentially forming each of the regions in the linearelement shown in FIG. 1 is shown in the present example.

The procedure is shown in FIG. 7.

First, by a spinning technique, a gate electrode raw material is ejectedfrom holes of a die a and a gate electrode 1 is formed (FIG. 7 (b)). Forthe sake of convenience, this gate electrode 1 is called an intermediateyarn-shaped body.

Next, as shown in FIG. 7(a), while the intermediate yarn-shaped body isinserted into the center of a die b and the intermediate yarn-shapedbody is traveled, an insulating film material is ejected from holesformed in the die b and an insulating film 2 is formed (FIG. 7(c)). And,a heater is disposed in the downstream side of the die b. Theyarn-shaped body is heated by this heater as necessary. By the heating,a solvent component in the insulating film can be removed from theinsulating film. The following formation of and a semiconductor layer issimilar.

Then, source and drain layers 3 and 4 are formed while the intermediateyarn-shaped body is traveled (FIGS. 7(c) and 7(d)). And, the sourceregion 4 and the drain region 3 are isolated and formed on theinsulating film 2. This can be achieved by disposing holes in only aportion of a die c.

Then, a semiconductor layer 5 is formed similarly while the intermediateyarn-shaped body is inserted into the center in the die and is traveledsimilarly.

And, as shown in FIG. 7(f), when takeout electrodes for source and drainwant to be disposed in a portion of a longitudinal direction, supply ofraw material from some holes (holes of portions corresponding to sourceand drain electrodes) of plural holes disposed in a die d could beturned off. Also, when holes for takeout want to be disposed in all ofthe longitudinal direction, the semiconductor layer could be formedusing a die d2 as shown in FIG. 7(g).

LINEAR ELEMENT EXAMPLE 6

A linear element example 6 is shown in FIG. 8.

The present example shows an example of ejection of a conductive polymerof the case of using the conductive polymer as a formation material of asemiconductor device.

In the linear element example 5, the example of forming an outer layeron a surface of an intermediate yarn-shaped body while the intermediateyarn-shaped body is inserted into a die has been shown. The presentexample shows the case that this outer layer is a conductive polymer.

A speed difference (v₁-v₀) of a raw material 82 is set at 1 m/sec orhigher. The difference is preferably set at 20 m/sec or higher. Thedifference is more preferably 50 m/sec or higher. The difference isfurther preferably 100 m/sec or higher. An upper limit is the speed atwhich an intermediate yarn-shaped body is not cut. The speed at whichcutting is caused varies depending on the discharge amount of material,the viscosity of material, the ejection temperature, etc. andspecifically, conditions of material etc. of practice could be set andobtained previously by experiment.

By setting a difference between an ejection speed v₀ and a travel speedv₁ at 1 m/sec or higher, acceleration is applied to the ejected materialand external force is exerted. A main direction of the external force isa travel direction. Molecular chains in the conductive polymer aregenerally in a twist state as shown in FIG. 8(c) and also, thelongitudinal directions of the molecular chains are directed in randomdirections. Whereas the external force is applied in the traveldirection together with ejection, the molecular chains are horizontallyaligned in the longitudinal directions while the twist is released asshown in FIG. 8(b).

By the way, electrons (or holes) move to the molecular chain with theclosest level by hopping as shown in FIG. 8(b). Therefore, when themolecular chains are horizontally oriented as shown in FIG. 8(b),hopping of electrons becomes easy to occur extremely as compared withthe case of being randomly oriented as shown in FIG. 8(c) By applyingthe external force to the travel direction together with ejection, themolecular chains can be oriented as shown in FIG. 8(b). Also, a distancebetween the mutual molecular chains can be shortened.

And, the present example can naturally be applied to other linearelement examples in the case of forming a predetermined region by theconductive polymer.

By setting the degree of longitudinal orientation of the molecularchains at 50% or higher, electron mobility improves and a linear elementwith better characteristics can be formed. A high degree of orientationcan also be controlled by controlling the difference between theejection speed and the travel speed. Also, it can also be controlled bycontrolling a draw ratio in a longitudinal direction.

And, the degree of orientation described herein is a value in which aratio of the number of molecules having an inclination of 0 to ±5° withrespect to the longitudinal direction to the total number of moleculesis multiplied by 100.

And, a linear element with still better characteristics can be obtainedby being set at 70% or higher.

LINEAR ELEMENT EXAMPLE 7

A linear element according to a linear element example 7 is shown inFIG. 9.

A linear element of the present example has a hollow region or aninsulating region 70 in the center, and has a semiconductor region 5 onits outside, and has a source region 4 and a drain region 3 inside thesemiconductor region 5 so that a portion is outwardly exposed, and has agate insulating film region 2 and a gate electrode region 1 on itsoutside.

And, a protective layer made of insulating resin etc. may be disposed onthe outside of the gate electrode region 1. A proper position of theprotective layer may be opened to form a takeout portion of the gateelectrode.

And, also in the present example, a cross section having another shapemay be inserted between the cross sections shown in FIG. 7 in anyposition of a longitudinal direction in a manner similar to the linearelement example 2.

In the case of the linear element of the present example, preferably,after the hollow region 70 and the semiconductor region 5 are formed byextrusion, doping is performed to the source region 4 and the drainregion 3 and then the insulating film region and the gate electroderegion 1 are respectively formed by coating. It is preferable to useinorganic materials such as SiO₂ as the insulating film 2.

LINEAR ELEMENT EXAMPLE 8

A linear element according to a linear element example 8 is shown inFIG. 10(a).

The present example is a linear element having a pin structure.

That is, an electrode region 102 is had in the center and on itsoutside, an n layer region 101, an i layer region 100, a p layer region103 and an electrode region 104 are formed. And, in the present example,a protective layer region 105 made of transparent resin etc. is disposedon the outside of the p layer region 103.

In this linear element, the electrode region 102, the n layer region 101and the i layer region 100 are integrally formed by extrusion.

The p layer region 103 and the electrode region 104 are formed by postprocessing. They are formed by, for example, coating. A thickness of thep layer region 103 can be thinned by forming the p layer region 103 bythe post processing. As a result of that, in the case of being used as aphotovoltaic element, incident light from the p layer 103 canefficiently be captured in a depletion layer.

Of course, the electrode region 102, the n layer region 101, the i layerregion 100, the p layer region 103 and the electrode region 104 may beintegrally formed by extrusion.

And, in FIG. 10(a), a circumference shape of the i layer is formed intoa circle, but is preferably formed into a star shape. As a result ofthis, an area of junction between the p layer 103 and the i layer 100increases and conversion efficiency can be enhanced.

In the example shown in FIG. 10(a), the electrode 104 is disposed in aportion of the p layer 103, but may be formed so as to cover all thecircumference of the p layer 103.

And, in the case of an np structure, a p⁺ layer may be disposed betweenthe p layer 103 and the electrode 104. Ohmic contact between the p layer103 and the electrode 104 becomes easy to make by disposing the p⁺layer. Also, electrons tend to flow to the i layer side.

An organic semiconductor material is preferably used as a semiconductormaterial for forming the p layer, the n layer and the i layer. Forexample, polythiophene, polypyrrole, etc. are used. Proper doping couldbe performed in order to for a p type and an n type. It may be acombination of p-type polypyrrole/n-type polythiophene.

Also, it is preferable to use a conductive polymer as an electrodematerial.

LINEAR ELEMENT EXAMPLE 9

A linear element according to a linear element example 9 is shown inFIG. 10(b).

In the linear element example 5, the pin structure has been formedconcentrically, but in the present example, a cross section shape was aquadrilateral. A p layer region 83, an i layer region 80 and an n layerregion 81 were laterally arranged. Also, electrodes 82, 83 wererespectively formed on the sides.

In the present example, the cross section shown in FIG. 10(b) is formedcontinuously in a longitudinal direction.

The linear element of this structure could be integrally formed byextrusion processing.

LINEAR ELEMENT EXAMPLE 10

In the present example, an electrode region is had in the center and onits outer circumference, one region made of a material in which a p-typematerial and an n-type material are mixed is formed. Further, anelectrode region is formed on its outer circumference.

That is, in the above example, a diode element of a two-layer structurein which the p layer and the n layer are joined (or a three-layerstructure through the i layer) has been shown. However, the presentexample is an example of a one-layer structure made of a material inwhich a p-type material and an n-type material are mixed.

A p-type/n-type mixed material is obtained by mixing an electron donorconductive polymer and an electron acceptor conductive polymer.

When an element region is formed by the p-type/n-type mixed material, asimple structure is obtained and it is preferable.

LINEAR ELEMENT EXAMPLE 11

In the present example, the linear element shown in the linear elementexamples was further drawn in a longitudinal direction. In a drawingmethod, for example, a technique for drawing a copper wire or a coppertube could be used.

A diameter can be further thinned by drawing. Particularly, in the caseof using a conductive polymer, the molecular chains can be paralleled inthe longitudinal directions as described above. As well, the spacingbetween the mutual molecular chains paralleled can be decreased.Therefore, hopping of electrons is efficiently performed. As a result ofthat, a linear element with better characteristics can be obtained.

It is preferable that a reduction ratio by drawing be 10% or more. It ismore preferable that the ratio be 10 to 99%.

And, the reduction ratio is 100 multiplied by (area before drawing minusarea after drawing) divided by (area before drawing).

The drawing may be repeated plural times. In the case of a material inwhich a modulus of elasticity is not large, the drawing could berepeated.

It is preferable that an outside diameter of a linear element afterdrawing be 1 mm or smaller. It is more preferable that the diameter be10 μm or smaller. It is still more preferable that the diameter be 1 μmor smaller. It is most preferable that the diameter be 0.1 μm orsmaller.

LINEAR ELEMENT EXAMPLE 12

A linear element example 12 is shown in FIG. 11.

In the present example, a raw material is linearly formed in aquadrilateral shape of a cross section by extrusion and an intermediatelinear extruded body 11 is produced (FIG. 11(a)). The raw material maybe extruded in other shapes of the cross section.

Next, the intermediate linear extruded body 111 is expanded in alengthwise direction or a lateral direction in the cross section and anexpanded body 112 is formed (FIG. 11(b)). The example of being expandedin the lateral direction in the drawing is shown in FIG. 11.

Then, the expanded body 112 is cut into a proper number parallel in alongitudinal direction and plural unit expanded bodies 113 a, 113 b, 113c, 1113 d are produced. And, it may proceed to the next process withoutperforming this cutting.

Then, the unit expanded body is processed in a proper shape. In theexample shown in the drawing, it is processed in a ring shape (FIG.11(d)), a spiral shape (FIG. 11(e)) and a double ring shape (FIG.11(f)).

Then, a proper material is buried in hollow parts 114 a, 114 b, 114 c,114 d. When the unit expanded body is a semiconductor material, anelectrode material is buried. Of course, it may be buried concurrentlywith processing into the ring shape rather than buried after processinginto the ring shape etc.

Also, in the case of the double structure as shown in FIG. 11(f), theunit expanded body 114 c may use a material different from that of theunit expanded body 114 d.

Also, after extrusion (FIG. 11(a)), expansion (FIG. 11(b)) or cutting(FIG. 11(d)), the surface may be coated with another material. Thecoating could be performed by, for example, dipping, vapor deposition,plating and other methods. A coating material can be selected properlyaccording to a function of an element produced. The coating material maybe any of semiconductor materials, magnetic materials, conductivematerials and insulating materials. The coating material may be any ofinorganic materials and organic materials.

In the case of using a conductive polymer as an expanded body materialin the present example, longitudinal directions of molecular chains areoriented so as to be positioned in a right and left direction on thedrawing, which is an expansion direction. As a result of that, afterbeing processed in the ring shape, the longitudinal directions of themolecular chains are oriented in a circumferential direction as shown inFIG. 11(g). Therefore, electrons tend to hop in a radial direction.

Also, when an opening 115 is disposed in the case of being processed inthe ring shape, this opening can be used as, for example, a takeoutopening of an electrode etc. It can also be used as a connection partbetween mutual linear elements in the case of weaving the linearelements mutually and forming an integrated device. Also, it can be usedas a junction surface to another region.

And, after processing of the ring shape etc., a linear body having thisring shape etc. can be used as an intermediate body for completing alinear element having a desired cross-sectional region.

And, as shown in FIG. 11(h), a constricted part (a part different fromother parts in a cross-sectional outside diameter shape) 117 may bedisposed periodically or aperiodically in a proper position of alongitudinal direction of a linear body. In the case of weaving anotherlinear element perpendicularly in the longitudinal direction, thisconstricted part can be utilized as a mark of positioning. Formation ofsuch a constricted part is not limited to the present example, and canalso be applied to other linear elements.

And, it is preferable that the degree of orientation of the molecularchains in the circumferential direction be set at 50% or higher. It ismore preferable that the degree be set at 70% or higher. As a result ofthis, a linear element with good characteristics can be obtained.

LINEAR ELEMENT EXAMPLE 13

The producing method example of an element in which a cross-sectionalshape is intermittently formed has been described in the above linearelement examples, but in the present example, another producing examplein the case of extrusion formation is shown in FIG. 12.

And, only a portion of a region in which a circuit element is formed isshown in FIG. 12.

In FIG. 12(a), a semiconductor material is ejected at only timing shownby a in the case of ejecting the semiconductor material. A conductor anda semiconductor may be simultaneously formed by continuously ejecting aconductor material and intermittently ejecting the semiconductormaterial. Also, a semiconductor material may be intermittently ejectedon the circumference of a conductor while a conductor part is firstformed and the conductor is traveled.

In an example shown in FIG. 12(b), a linear semiconductor or insulatoris first formed and then a portion having a different cross-sectionalregion in a longitudinal direction is disposed by coating a conductivebody intermittently in the longitudinal direction through vapordeposition etc.

In an example shown in FIG. 12(c), first, an organic material islinearly formed. Next, light is intermittently applied in a longitudinaldirection and photopolymerization is caused in the applied portion.

As a result of this, a portion having a different cross-sectional regionin the longitudinal direction can be formed.

In FIG. 12(d), α is a conductive polymer of a light transmission typeand β is an intermediate linear body in which two layers made of aconductive polymer of a photo-curing type are integrally formed byextrusion. When light is intermittently applied while traveling thisintermediate linear body, an a portion causes photo-curing. As a resultof this, a portion having a different cross-sectional region in alongitudinal direction can be formed.

FIG. 12(e) is an example of using ion application. A linear body istraveled and an application device is disposed on the way. Ions areintermittently applied from ion application. The ions may be appliedfrom all the directions or may be applied from only a predetermineddirection. The direction could be decided properly according to across-sectional region to be formed. Also, a range of the ion could bedecided properly.

A heating device is disposed in the downstream side of an ionapplication device, and the linear body after the ion application isheated. A portion to which the ions are applied is changed into thedifferent composition by heating.

In the case of being applied from all the directions, all the surfacesare changed into the different composition. Also, in the case ofapplying the ions from only a predetermined direction, only the portionis changed into the different composition.

And, with respect to the portion to which the ions are applied, theexample in which an intermediate linear body of a subject of the ionapplication has a one-layer structure has been shown in the exampleshown in FIG. 12(f), but even for a two-layer structure, the ions canalso be implanted in only the inside by controlling a range at the timeof the ion application. A different composition can be formed in theinside applied by heat treatment.

When a silicon linear body is used as an intermediate linear body and Oions are implanted, an SiO₂ region can be formed. In the case ofcontrolling a range, the so-called BOX (buried oxide film) can beformed. And, the BOX has been described as the case of intermittentlyforming another cross-sectional region, but the BOX may be formed in thewhole area of a longitudinal direction.

APPLICATION EXAMPLE 1

The present example is an example of forming an integrated circuit byweaving of plural linear elements.

An integrated circuit example is shown in FIG. 13.

An integrated circuit shown in FIG. 13 is a DRAM type semiconductormemory. The DRAM memory is made of memory cells arranged vertically andhorizontally and its circuit is shown in FIG. 13(a).

One cell is made of a MOSFET 209 a 1 and a capacitor 207. Conductors ofbit lines S1, S2, . . . and word lines G1, G2, . . . are connected toeach of the cells.

As shown in FIG. 13(b), this cell is constructed of a MOSFET linearelement 209 a 1 and a capacitor linear element 207. The MOSFET linearelements are prepared by the number of columns.

In this MOSFET 209 a 1, a gate electrode 201, an insulating layer 202,source and drain 204 and 205, and a semiconductor layer 203 aresequentially formed from the center toward the outer circumference.

Also, an element isolation region 210 is formed in a longitudinaldirection. However, the gate electrode 201 extends through one linearbody. That is, using one gate electrode as a common word line, pluralMOSFETs 209 a 1, 209 b 1, . . . are formed in one linear body in thelongitudinal direction.

Also, MOSFETs 209 a 2, a 3, . . . of FIG. 13(a) are similarlyconstructed of linear elements.

And, it is preferable to construct this MOSFET linear element of apolymer material.

Also, a takeout part of the source region 204 is protruded radially asshown in FIG. 13(c). This is because contact with the bit line S1 isfacilitated. Also, the drain region 205 is protruded radially as shownin FIG. 13(d). The protrusion positions of the drain and the source areshifted in the longitudinal direction.

On the other hand, in the capacitor linear element 207, an electrode, aninsulating layer and an electrode are sequentially formed from thecenter toward the outside.

S1 is the bit line and has a linear shape. It is preferable to use aconductive polymer as a material. This bit line S1206 is wound on thesource part 204 to make contact with the source 204. This bit line S1 iswound on source regions of linear MOSFET elements respectivelyconstructing the MOSFETs 209 a 2, a 3, . . . .

Also, the drain region 205 is connected to the capacitor 207 by a linearconductive polymer 210.

And, in the example shown in FIG. 13, the capacitor has been formed byanother linear element, but may be disposed in a proper position of alinear body in which the MOSFET is formed. As a result of that, thenumber of linear elements used decreases and the degree of integrationcan be increased more. Also, the capacitor is not connected by theconductive polymer 210 and may be directly joined to the MOSFET linearelement using a conductive adhesive etc.

As described above, after weaving the linear elements vertically andhorizontally, all the linear elements could be coated with an insulatingmaterial to prevent leakage of a conductive part.

And, a diode may be used instead of the capacitor.

APPLICATION EXAMPLE 2

The present example shows an integrated circuit formed by bundlingplural linear elements.

An example of using a MOSFET linear element is also shown in the presentexample. Of course, other linear elements may be used.

Plural MOSFET linear elements are prepared.

When signal input elements are formed on end faces of each of the linearelements and are bundled, various information can be sensed. Forexample, when a light sensor, an ion sensor, a pressure sensor, etc. aredisposed, information corresponding to five senses of human beings canbe sensed.

For example, when a sensor corresponding to signals of 100 kindsattempts to be formed of a conventional substrate type semiconductorintegrated circuit, the sensor must be produced by repeatingphotolithography processes 100 times. However, in the case of using anend face of the linear element, the sensor corresponding to the signalsof 100 kinds can be formed simply without repeating suchphotolithography processes.

Also, a sensor with high density can be obtained.

APPLICATION EXAMPLE 3

It can be applied as, for example, a photovoltaic integrated device asdescribed below.

A photovoltaic device can be formed by bundling, twisting or weavinglinear elements having pin structures. And, it is preferable that a pinlayer be constructed of a conductive polymer. Also, it is preferable toadd a sensitizer.

For example, fabric is formed by weaving linear elements and clothes canalso be formed by this fabric. In this case, all the linear elementsform a light receiving region and incident light can be received from anangle of 360°. As well, light can be received in a three-dimensionalmanner and a photovoltaic element with high light receiving efficiencycan be formed.

Also, light capture efficiency is very high. That is, the light, whichis not inputted to the linear element and is reflected, is also capturedin fabric and repeats reflection and thereby is inputted to the otherlinear elements. And, it is preferable to form the linear elements byextrusion processing.

Electrodes from each of the elements could be connected to a collectingelectrode to dispose a connection terminal in this collecting electrode.

Also, when a storage battery is incorporated into back fabric ofclothes, electricity can be utilized in a dark place.

Also, when a heat generation body is disposed in clothes, the clotheshaving a heating effect can be formed.

Further, when linear heat generation body are coated with an insulatinglayer and are woven in fabric shape together with linear photovoltaicelements, clothes having a heating effect can be produced.

Also, linear elements can be transplanted to a base material of adesired shape to form a solar battery. That is, a solar battery withextremely high light capture efficiency can be formed by transplantingthe linear elements in a fuzzy state or a hedgehog-like state.

Reduction in the total weight is desired in a communication satellite.Since the solar battery is very lightweight, the solar battery is usefulas a power generator in the communication satellite.

Since the solar battery has bendability, the solar battery can be formedalong any shape and can be attached to an outer surface of a main bodyof the communication satellite using an adhesive.

And, when linear photovoltaic elements are easily transplanted to thesurface of a base material adapted for a shape of a person's head, anartificial wig having a power generation function can be formed.

Also, in the case of using very thin linear elements, the linearelements have a suede effect and can be used as a leather-like surface.A bag can also be formed by such linear elements. That is, a bag havinga power generation function can be formed.

APPLICATION EXAMPLE 4

Another application example is shown in FIG. 14.

In the present example, a linear source electrode and a linear drainelectrode are brought into contact with a proper position of a linearbody in which a gate electrode is coated with an insulating layer. Therange of a contact portion of the source electrode to a contact portionof the drain electrode is coated with an organic semiconductor material.

Also, as shown in FIG. 15, a linear source electrode or a linear drainelectrode may be once or plural times wound on a linear body in which agate electrode is coated with an insulating layer. Sufficient contactcan be obtained by winding. And, when a constricted portion is disposedin the linear body, it is convenient for positioning in the case ofwinding etc.

As shown in FIG. 16, a source electrode and a drain electrode can alsobe brought into contact with only a proper linear body (point A). Also,connection between the source electrode and the drain electrode canfurther be made by another conductor (point B).

In FIG. 16, an example of one column as a column has been shown, but canalso be arranged in plural columns. In this case, connection could bemade in a three-dimensional manner. Since the linear body, the sourceelectrode and the drain electrode have bendability, they can be bent ina desired direction in a desired position.

When mutual connections are made in a desired position in athree-dimensional manner using, for example, MOSFET linear elements as alinear body, a desired logic circuit can be assembled. In the case ofusing a conventional semiconductor substrate as a basic component, along current passage is required, but use of linear elements enables thecurrent passage to be shortened extremely and a very high-speed logiccircuit can be constructed.

LINEAR ELEMENT EXAMPLE 14

A linear element example 14 is shown in FIG. 17.

As shown in FIG. 17(a), in a linear element of the present example, acenter electrode 3000 is had in the center, and an insulating layer 3004is formed on the outer circumference of said center electrode 3000, anda semiconductor layer 3003 in which pairs of source regions 3001 a, 3001b, 3001 c, 3001 d and drain regions 3002 a, 3002 b, 3002 c, 3002 d areformed by plural pairs 3005 a, 3005 b, 3005 c, 3005 d is formed on theouter circumference of said insulating layer 3004.

An equivalent circuit of the linear element shown in FIG. 17(a) is shownin FIG. 17(b).

In the present example, the center electrode 3000 acts as a gateelectrode. Also, the center electrode 3000 acts as a common electrode.That is, the center electrode acts as the common electrode of foursource and drain pairs 3005 a, 3005 b, 3005 c, 3005 d. Four pairs ofMOSFETs can be produced in one linear body by having only one gateelectrode. Of course, the source and drain pairs are not limited to fourpairs, and two or more pairs may be formed.

FIG. 17(c) is an equivalent circuit of the case of connecting sources bya common line. The sources could be connected in an end face of the topor the bottom of a linear body. Also, an exposure part may be formed inthe middle portion of a longitudinal direction of the linear body tomake connection from the exposure part.

FIG. 17(d) is an equivalent circuit of the case of connecting drains bya common line. Connection between the drains could be made in a mannersimilar to the case of the sources.

The element of the present example can be produced by, for example, theinjection molding described above.

LINEAR ELEMENT EXAMPLE 15

A linear element example 15 is shown in FIG. 18.

As shown in FIG. 18(a), a linear element of the present example isconstructed so that an electrode 3100 is had in the center and aninsulating layer 3103 a is formed on the outer circumference of saidcenter electrode 3100 and plural semiconductor layers 3104 b, 3104 c andinsulating layers 3103 b, 3103 c are alternately formed on the outercircumference of said insulating layer 3103 a and one or more pairs of asource region 3102 b and a drain region 3101 b are formed in each of thesemiconductor layers of the outside from the second layer and also adrain region 310 a or a drain electrode in the semiconductor layer ofthe inside is located between said source region 3102 b and the drainregion 3101 b.

An equivalent circuit of the element of FIG. 17(a) is shown in FIG.18(b).

In the present example, an output of the drain in the insidecircumference is used as an input of the semiconductor layer in theoutside circumference. Therefore, parallel processing of many signalscan be performed by one gate (center electrode 3100).

FIG. 18(c) is an equivalent circuit of the case of forming pluralMOSFETs in one semiconductor layer. Thus, according to the presentexample, an integrated circuit with a very high degree of integrationcan be formed.

LINEAR ELEMENT EXAMPLE 16

A linear element example 16 is shown in FIG. 19.

The present example has a source region 3201 in the center of asemiconductor layer 3200, and has plural gate electrodes 3202 a, 3202 b,3202 c, 3202 d, 3202 e, 3202 f intermittently arranged in acircumferential direction on the circumference of said source region3201 through a semiconductor layer, and has a drain region 3203 on theouter circumference of said semiconductor layer 3200.

An example of producing the element of the present example is shown in(1) to (5) of FIG. 19.

First, a wire 3201 for source is prepared. For example, silver, gold andother conductive materials could be used as the wire for source.

Next, a surface of the wire 3201 for source is coated with asemiconductor layer by a dipping method etc. It is preferable to use theorganic semiconductor described above as a semiconductor.

On the other hand, plural gate electrodes are prepared and the gateelectrodes are placed on a flat surface at a desired spacing.

After being coated with the semiconductor layer, it is rolled on thegate electrodes at a point in time when the semiconductor layer is in asemidry state as shown in (3). As a result of this, an intermediate bodyin which the gate electrodes are circumferentially placed on a surfaceof the semiconductor layer at the desired spacing is formed.

Then, a semiconductor liquid layer is formed on a surface of theintermediate body in which the gate electrodes are formed by a dippingmethod etc.

Then, a drain electrode made of gold etc. is formed on the outercircumference of the semiconductor layer by a vapor deposition methodetc.

LINEAR ELEMENT EXAMPLE 17

Heat treatment is performed with respect to a linear element for variouspurposes. Also, dopant is injected into the linear element.

FIG. 20 is a diagram showing an apparatus capable of performing heattreatment at different temperatures or injecting different dopants.

The present apparatus is constructed so that plural pipes 2200 a, 2200 bare placed in a multistage state and a linear element 2202 is fedthrough the pipes 2200 a, 2200 b placed in the multistage state.

For example, when an oxide film wants to be formed in an A portion ofthe linear element 2202, feeding of the linear element 2202 could bestopped to introduce warmed oxidative gas into the pipe 2200 a. Or, whengas including dopant is introduced, the dopant can be injected into theA portion. Therefore, a linear element having a differentcross-sectional region in a longitudinal direction can be produced.

Also, when heat treatment of the whole linear element 2202 wants to beperformed, warmed inert gas could be introduced into the pipe 2200 awith feeding of the linear element continued. For example, it can beused in heat treatment for diffusing dopant after the dopant isinjected.

Also, the same gas or different gases may be supplied to the pipe 2200 aand the pipe 2200 b. When the same gas is supplied, gas temperature maybe set at different temperatures or may be set at the same temperature.

And, it is preferably constructed so that a gap between the pipe 2200 aand the pipe 2200 b is held in a sealed state and emission is performedfrom sealed space. As a result of this, leak gas can be prevented fromleaking to the outside.

As the gas, for example, diborane gas may be supplied. In this case, thelinear element passes through a liquid phase, so that, for example,doping can be performed. That is, the doping can be performed even inthe case of the simple apparatus as shown in FIG. 20.

And, in the heat treatment with respect to the linear element, heattreatment intended to obtain the optimum junction or crystallinity, heattreatment intended for diffusion of dopant and other heat treatment areillustrated.

INDUSTRIAL APPLICABILITY

(Effect of Linear Element)

A linear element which has flexibility or bendability without beinglimited to its shape and can generate various apparatus with any shapes,and a method of producing the linear element can be provided.

An end face sensor device which has flexibility or bendability withoutbeing limited to its shape and can generate various apparatus with anyshapes, and a method of producing the end face sensor device can beprovided.

1. An end face sensor device characterized in that a receiving part forreceiving information from a subject and outputting the information asanother information is formed on an end face of a linear body.
 2. An endface sensor device as claimed in claim 1, characterized in that thereceiving part is a light sensor.
 3. An end face sensor device asclaimed in claim 2, characterized in that the light sensor is any of aphotodiode, a phototransistor, a photo IC, a photo thyristor, aphotoconductive element, a pyroelectric element, a color sensor, asolid-state image sensor, an element for position detection, and a solarbattery.
 4. An end face sensor device as claimed in claim 1,characterized in that the receiving part is a temperature sensor.
 5. Anend face sensor device as claimed in claim 1, characterized in that thereceiving part is a humidity sensor.
 6. An end face sensor device asclaimed in claim 1, characterized in that the receiving part is anultrasonic sensor.
 7. An end face sensor device as claimed in claim 1,characterized in that the receiving part is a pressure sensor.
 8. An endface sensor device as in claim 1, characterized in that a part or all ofthe receiving part is formed using a conductive polymer.
 9. An end facesensor device as claimed in claim 8, characterized in that only onemolecule of the conductive polymer is present between electrodes.
 10. Anend face sensor device as in claim 1, characterized in that the linearbody is a linear element in which a circuit element is formedcontinuously or intermittently in a longitudinal direction.
 11. An endface sensor device as in claim 1, characterized by being a linearelement in which a cross section having plural regions for forming acircuit is formed continuously or intermittently in a longitudinaldirection.
 12. An end face sensor device characterized in that the endface sensor device is made of a linear body having at least twoconductive regions in a cross section through an insulating region and alayer made of a conductive polymer is formed on an insulating layerregion of an end face.
 13. An end face sensor device as claimed in claim12, characterized in that one of the conductive regions is formed in thecenter and the other conductive regions are formed in the outercircumference.
 14. An end face sensor device as claimed in claim 13,characterized in that a longitudinal direction of a conductive polymeris arranged in a radial direction.
 15. An end face sensor device asclaimed in claim 13, characterized in that a molecular length of aconductive polymer is shorter than or equal to a distance betweenelectrodes.
 16. An end face sensor device as claimed in claim 13,characterized in that a conductive polymer has a side chain used as asusceptor part with respect to a subject to be measured.
 17. A method ofproducing an end face sensor device, characterized in that plural linearbodies are bundled to form a bundle and receiving parts are formed onend faces of said linear bodies every said bundle.
 18. A method ofproducing a multi-functional end face sensor device, characterized inthat plural bundles in which plural linear bodies are bundled areprepared and receiving parts with different functions every each of thebundles are formed on end faces of said linear bodies and then thelinear bodies are taken out of each of the bundles and said linearbodies taken out are bundled.
 19. A method of producing an end facesensor device, characterized in that at least one pair of electrodes aredisposed in a linear body and a film is formed on an end face of thelinear body while a bias voltage is applied between said electrodes. 20.A method of producing an end face sensor device as claimed in claim 17,characterized in that the one pair of electrodes are disposed in thecenter and the outer circumference of said linear body.
 21. A method ofproducing an end face sensor device as in claim 17, characterized inthat the film is made of a conductive polymer.
 22. A method of producingan end face sensor device as claimed in claim 21, characterized in thata length of one molecule of the conductive polymer is shorter than orequal to a distance between the electrodes.
 23. An end face sensordevice as in claim 19, characterized in that the bias voltage is a DCvoltage.
 24. A method of producing an end face sensor device as in claim19, characterized in that the bias voltage is an AC voltage.
 25. Amethod of producing an end face sensor device, characterized in that onepair of electrodes are disposed in a linear body and a film is formed onan end face of the linear body while a DC bias voltage and an AC biasvoltage are superimposed and applied between said electrodes.
 26. Amethod of producing an end face sensor device as in claim 19,characterized in that a frequency of the AC bias voltage is changed withtime.